NESG2107M33-A Bipolar RF Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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NESG2107M33-A

Bipolar RF Transistors

CEL (California Eastern Laboratories)

RF TRANS NPN 5V 10GHZ 3SMINMOLD

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NESG2107M33-A

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NESG2107M33-A

Bipolar RF Transistors

CEL (California Eastern Laboratories)

RF TRANS NPN 5V

Bipolar RF Transistors

Bulk

Product parameters

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TYPE	DESCRIPTION
Mfr	CEL (California Eastern Laboratories)
Series	-
Package	Bulk
Product Status	OBSOLETE
Package / Case	3-SMD, Flat Lead
Mounting Type	Surface Mount
Transistor Type	NPN
Operating Temperature	150°C (TJ)
Gain	7dB ~ 10dB
Power - Max	130mW
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	5V
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 5mA, 1V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.5dB @ 2GHz
Supplier Device Package	3-SuperMiniMold (M33)

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