SIR184LDP-T1-RE3 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

SIR184LDP-T1-RE3

Single FETs, MOSFETs

Vishay / Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

Tape & Reel (TR)

5583

Price:

$1.3230

inventory: 5583

Total number

Quantity

Price

Total price

$1.3230

$1.0890

$10.8900

100

$0.8460

$84.6000

500

$0.7200

$360.0000

1000

$0.5850

$585.0000

3000

$0.5490

$1,647.0000

6000

$0.5220

$3,132.0000

9000

$0.4950

$4,455.0000

Obtain quotation information

product details

SIR184LDP-T1-RE3

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

SIR184LDP-T1-RE3

Single FETs, MOSFETs

Vishay / Siliconix

N-CHANNEL 60 V

Single FETs, MOSFETs

Tape & Reel (TR)

5583

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	PowerPAK® SO-8
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs	5.4mOhm @ 10A, 10V
Power Dissipation (Max)	5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 30 V

Online service

Online service

Online service