TP65H070G4QS-TR Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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TP65H070G4QS-TR

Single FETs, MOSFETs

Transphorm

650 V 29 A GAN FET

Tape & Reel (TR)

Price:

$7.7490

Total number

Quantity

Price

Total price

$7.7490

$6.6420

$66.4200

100

$5.5350

$553.5000

500

$4.8780

$2,439.0000

1000

$4.3920

$4,392.0000

2000

$4.1130

$8,226.0000

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product details

TP65H070G4QS-TR

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

TP65H070G4QS-TR

Single FETs, MOSFETs

Transphorm

650 V 29 A GAN

Single FETs, MOSFETs

Tape & Reel (TR)

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerSFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Power Dissipation (Max)	96W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 700µA
Supplier Device Package	TOLL
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V

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