TP65H150G4LSG Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

TP65H150G4LSG

Single FETs, MOSFETs

Transphorm

GAN FET N-CH 650V PQFN

Tray

2834

Price:

$4.5540

inventory: 2834

Total number

Quantity

Price

Total price

$4.5540

$4.0860

$40.8600

100

$3.3480

$334.8000

500

$2.8530

$1,426.5000

1000

$2.4030

$2,403.0000

3000

$2.1150

$6,345.0000

Obtain quotation information

product details

TP65H150G4LSG

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

TP65H150G4LSG

Single FETs, MOSFETs

Transphorm

GAN FET N-CH 65

Single FETs, MOSFETs

Tray

2834

Product parameters

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	3-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V

Online service

Online service

Online service