TPD3215M FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

TPD3215M

FET, MOSFET Arrays

Transphorm

GANFET 2N-CH 600V 70A MODULE

Bulk

Price:

Total number

Quantity

Price

Total price

Obtain quotation information

product details

TPD3215M

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

TPD3215M

FET, MOSFET Arrays

Transphorm

GANFET 2N-CH 60

FET, MOSFET Arrays

Bulk

Product parameters

PDF(1)

PDF(2)

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Bulk
Product Status	OBSOLETE
Package / Case	Module
Mounting Type	Through Hole
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Power - Max	470W
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	2260pF @ 100V
Rds On (Max) @ Id, Vgs	34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 8V
Supplier Device Package	Module

Online service

Service hours: Monday to Saturday 9:00-18:00

+86-13723477211

Online service

Service hours: Monday to Saturday 9:00-18:00

Please select online customer service:

sales@fuchaoic.com

Online service

Service hours: Monday to Saturday 9:00-18:00

Please select online customer service: