TPH3208LDG Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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TPH3208LDG

Single FETs, MOSFETs

Transphorm

GANFET N-CH 650V 20A 3PQFN

Tube

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$9.8190

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TPH3208LDG

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TPH3208LDG

Single FETs, MOSFETs

Transphorm

GANFET N-CH 650

Single FETs, MOSFETs

Tube

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tube
Product Status	OBSOLETE
Package / Case	3-PowerDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Rds On (Max) @ Id, Vgs	130mOhm @ 13A, 8V
Power Dissipation (Max)	96W (Tc)
Vgs(th) (Max) @ Id	2.6V @ 300µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±18V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V

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